| PART |
Description |
Maker |
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| AM42DL16X2D |
16 Mbit (2 M x 8-Bit/1 M x 16-Bit) CMOS and 2 Mbit (128 K x 16-Bit) Static RAM (Preliminary)
From old datasheet system
|
AMD Inc
|
| M36W0R7050B0 M36W0R7050B0ZAQ M36W0R7050T0 M36W0R70 |
SPECIALTY MEMORY CIRCUIT, PBGA88
128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, 1.8V Supply Multi-Chip Package
|
STMICROELECTRONICS
ST Microelectronics
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| AD5247BKSZ100-1RL7 AD5247BKSZ100-2RL7 |
128-Position I2C®-Compatible Digital Potentiometer; Package: SC70; No of Pins: 6; Temperature Range: Automotive 100K DIGITAL POTENTIOMETER, 2-WIRE SERIAL CONTROL INTERFACE, 128 POSITIONS, PDSO6
|
Analog Devices, Inc.
|
| CY14B101LA-SP25XI CY14B101LA-SP25XIT CY14B101LA-SP |
1-Mbit (128 K × 8/64 K × 16) nvSRAM
|
Cypress Semiconductor
|
| CY14V101LA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM
|
Cypress Semiconductor
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
